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| PartNumber | KSD261CGTA | KSD261CGBU | KSD261CGTA_Q |
| Description | Bipolar Transistors - BJT NPN Epitaxial Transistor | Bipolar Transistors - BJT NPN Epitaxial Sil | Bipolar Transistors - BJT NPN Epitaxial Transisto |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-92-3 Kinked Lead | TO-92-3 | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 20 V | 20 V | - |
| Collector Base Voltage VCBO | 40 V | 40 V | - |
| Emitter Base Voltage VEBO | 5 V | 5 V | - |
| Collector Emitter Saturation Voltage | 0.18 V | 0.18 V | - |
| Maximum DC Collector Current | 0.5 A | 0.5 A | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | KSD261 | - | - |
| DC Current Gain hFE Max | 400 | 400 | - |
| Height | 4.7 mm | 4.58 mm | - |
| Length | 4.7 mm | 4.58 mm | - |
| Packaging | Ammo Pack | Bulk | - |
| Width | 3.93 mm | 3.86 mm | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| DC Collector/Base Gain hfe Min | 120 | 120 | - |
| Pd Power Dissipation | 500 mW | 500 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 2000 | 1000 | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | KSD261CGTA_NL | - | - |
| Unit Weight | 0.008466 oz | 0.008466 oz | - |