KSB546YTU vs KSB546YTU_Q vs KSB546-Y

 
PartNumberKSB546YTUKSB546YTU_QKSB546-Y
DescriptionBipolar Transistors - BJT PNP Epitaxial SilBipolar Transistors - BJT
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 150 V--
Collector Base Voltage VCBO- 200 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 1 V--
Maximum DC Collector Current2 A--
Gain Bandwidth Product fT5 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesKSB546--
DC Current Gain hFE Max240--
Height9.4 mm--
Length10.1 mm--
PackagingTube--
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current- 2 A--
DC Collector/Base Gain hfe Min40--
Pd Power Dissipation25 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.063493 oz--
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