KSA473YTU vs KSA473YTSTU vs KSA473YTSTUA

 
PartNumberKSA473YTUKSA473YTSTUKSA473YTSTUA
DescriptionBipolar Transistors - BJT PNP Epitaxial SilBipolar Transistors - BJT PNP Epitaxial Sil Short LeadsBipolar Transistors - BJT
ManufacturerON SemiconductorON SemiconductorFairchild Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors - Bipolar (BJT) - RF
RoHSYY-
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3-
Transistor PolarityPNPPNPPNP
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 30 V- 30 V-
Collector Base Voltage VCBO- 30 V- 30 V-
Emitter Base Voltage VEBO- 5 V- 5 V-
Collector Emitter Saturation Voltage- 0.3 V- 0.3 V- 0.3 V
Maximum DC Collector Current3 A3 A-
Gain Bandwidth Product fT100 MHz100 MHz100 MHz
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesKSA473--
DC Current Gain hFE Max240240240
Height9.4 mm9.4 mm (Max)-
Length10.1 mm10.67 mm (Max)-
PackagingTubeTube-
Width4.7 mm4.83 mm (Max)-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Continuous Collector Current- 3 A- 3 A-
DC Collector/Base Gain hfe Min7070-
Pd Power Dissipation10 W10 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity100050-
SubcategoryTransistorsTransistors-
Unit Weight0.063493 oz0.080072 oz0.080072 oz
Package Case--TO-220-3
Pd Power Dissipation--10 W
Collector Emitter Voltage VCEO Max--- 30 V
Collector Base Voltage VCBO--- 30 V
Emitter Base Voltage VEBO--- 5 V
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