Jantxv2N3700 vs Jantxv2N3700/TR vs JANTXV2N3700A

 
PartNumberJantxv2N3700Jantxv2N3700/TRJANTXV2N3700A
DescriptionBipolar Transistors - BJT NPN TransistorBipolar Transistors - BJT
ManufacturerMicrochipMicrochip-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSNN-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-18-3TO-18-3-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max80 V80 V-
Collector Base Voltage VCBO140 V140 V-
Emitter Base Voltage VEBO7 V7 V-
Collector Emitter Saturation Voltage0.5 V0.5 V-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 200 C+ 200 C-
DC Current Gain hFE Max300300 at 500 mA, 10 V-
PackagingBulk--
BrandMicrochip / MicrosemiMicrochip / Microsemi-
Continuous Collector Current1 A--
DC Collector/Base Gain hfe Min1515 at 1 A, 10 V-
Pd Power Dissipation1 W1 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity11-
SubcategoryTransistorsTransistors-
Maximum DC Collector Current-1 A-
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