PartNumber | Jan2N3501 | Jan2N3501L | Jan2N3501/TR |
Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | N | N | N |
Technology | Si | - | Si |
Mounting Style | Through Hole | - | Through Hole |
Transistor Polarity | NPN | - | NPN |
Configuration | Single | - | Single |
Collector Emitter Voltage VCEO Max | 150 V | - | 150 V |
Collector Base Voltage VCBO | 150 V | - | 150 V |
Emitter Base Voltage VEBO | 6 V | - | 6 V |
Collector Emitter Saturation Voltage | 200 mV | - | 0.4 V |
Maximum DC Collector Current | 300 mA | - | 300 mA |
Minimum Operating Temperature | - 65 C | - | - 65 C |
Maximum Operating Temperature | + 200 C | - | + 200 C |
Packaging | Bulk | Tray | - |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Pd Power Dissipation | 1 W | - | 1 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1 | 1 | 1 |
Subcategory | Transistors | Transistors | Transistors |
Package / Case | - | - | TO-39-3 |
DC Current Gain hFE Max | - | - | 300 at 150 mA, 10 V |
DC Collector/Base Gain hfe Min | - | - | 20 at 300 mA, 10 V |