PartNumber | Jantxv2N2219AL | Jantxv2N2219A/TR | JANTXV2N2219A |
Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
Manufacturer | Microchip | Microchip | Microsemi |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Transistors - Bipolar (BJT) - RF |
RoHS | N | N | - |
Packaging | Tray | - | Reel |
Brand | Microchip / Microsemi | Microchip / Microsemi | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
Factory Pack Quantity | 1 | 1 | - |
Subcategory | Transistors | Transistors | - |
Technology | - | Si | - |
Mounting Style | - | Through Hole | Through Hole |
Package / Case | - | TO-39-3 | - |
Transistor Polarity | - | NPN | - |
Configuration | - | Single | - |
Collector Emitter Voltage VCEO Max | - | 50 V | - |
Collector Base Voltage VCBO | - | 75 V | - |
Emitter Base Voltage VEBO | - | 6 V | - |
Collector Emitter Saturation Voltage | - | 0.3 V | - |
Maximum DC Collector Current | - | 800 mA | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 200 C | - |
DC Current Gain hFE Max | - | 325 at 1 mA, 10 V | - |
DC Collector/Base Gain hfe Min | - | 50 at 100 uA, 10 V | - |
Pd Power Dissipation | - | 3 W | - |
Package Case | - | - | TO-39-3 |