JANTX2N3019 vs JANTX2N3019/TR vs JANTX2N3019A

 
PartNumberJANTX2N3019JANTX2N3019/TRJANTX2N3019A
DescriptionBipolar Transistors - BJT JANTX2N3019SMALL-SIGNAL BJT
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-5-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max80 V--
Collector Base Voltage VCBO140 V--
Emitter Base Voltage VEBO7 V--
Collector Emitter Saturation Voltage0.2 V--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 200 C--
DC Current Gain hFE Max300 mA--
PackagingBulk--
BrandON Semiconductor--
Continuous Collector Current1 A--
DC Collector/Base Gain hfe Min15--
Pd Power Dissipation800 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity100--
SubcategoryTransistors--
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