J111RLRAG vs J111RLRA vs J111RLRP

 
PartNumberJ111RLRAGJ111RLRAJ111RLRP
DescriptionJFET 35V 10mAJFET 35V 10mAJFET 35V 10mA
ManufacturerON SemiconductorON SemiconductorON
Product CategoryJFETJFETs (Junction Field Effect)JFETs (Junction Field Effect)
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-92-3--
Transistor PolarityN-Channel--
ConfigurationSingle--
Vgs Gate Source Breakdown Voltage35 V--
Drain Source Current at Vgs=020 mA--
PackagingReelTape & Reel (TR)-
TypeJFET--
BrandON Semiconductor--
Factory Pack Quantity2000--
Unit Weight0.016000 oz--
Series---
Package Case-TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-
Mounting Type-Through Hole-
Supplier Device Package-TO-92-3-
FET Type-N-Channel-
Power Max-350mW-
Voltage Breakdown V BRGSS-35V-
Drain to Source Voltage Vdss---
Current Drain Idss Vds Vgs=0-20mA @ 15V-
Current Drain Id Max---
Voltage Cutoff VGS off Id-3V @ 1μA-
Input Capacitance Ciss Vds---
Resistance RDS On-30 Ohm-
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