J108 vs J108,126 vs J108-18

 
PartNumberJ108J108,126J108-18
DescriptionJFET JFET N-Channel -25V 50mA 360mW 3.27mWRF JFET Transistors N-Channel Single '+/- 25V 80mA
ManufacturerInterFETNXP Semiconductors-
Product CategoryJFETJFETs (Junction Field Effect)-
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-92-3--
Transistor PolarityN-Channel--
ConfigurationSingle--
Vds Drain Source Breakdown Voltage15 V--
Vgs Gate Source Breakdown Voltage- 25 V--
Drain Source Current at Vgs=080 mA--
Id Continuous Drain Current1 uA--
Rds On Drain Source Resistance8 Ohms--
Pd Power Dissipation360 mW--
SeriesJ108--
PackagingBulkTape & Box (TB)-
TypeJFET--
BrandInterFET--
Gate Source Cutoff Voltage- 10 V--
Factory Pack Quantity1--
Unit Weight0.016000 oz--
Package Case-TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-
Mounting Type-Through Hole-
Supplier Device Package-TO-92-3-
FET Type-N-Channel-
Power Max-400mW-
Voltage Breakdown V BRGSS-25V-
Drain to Source Voltage Vdss-25V-
Current Drain Idss Vds Vgs=0-80mA @ 5V-
Current Drain Id Max---
Voltage Cutoff VGS off Id-10V @ 1μA-
Input Capacitance Ciss Vds-30pF @ 0V-
Resistance RDS On-8 Ohm-
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