IXXR110N65B4H1 vs IXXR100N60B3H1 vs IXXR100N50B3H1

 
PartNumberIXXR110N65B4H1IXXR100N60B3H1IXXR100N50B3H1
DescriptionIGBT Transistors 650V/150A TRENCH IGBT GENX4 XPTIGBT Transistors XPT 600V IGBT GenX3 XPT IGBT
ManufacturerIXYSIXYS-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseISOPLUS 247-3ISOPLUS 247-3-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingle--
Collector Emitter Voltage VCEO Max650 V600 V-
Collector Emitter Saturation Voltage1.75 V1.5 V-
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C150 A145 A-
Pd Power Dissipation455 W400 W-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 150 C-
SeriesIXXR110N65IXXR100N60-
PackagingTubeTube-
Continuous Collector Current Ic Max70 A440 A-
BrandIXYSIXYS-
Gate Emitter Leakage Current100 nA100 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity3030-
SubcategoryIGBTsIGBTs-
TradenameXPTXPT, GenX3-
Unit Weight0.186952 oz0.186952 oz-
Height-21.34 mm-
Length-16.13 mm-
Operating Temperature Range-- 55 C to + 150 C-
Width-5.21 mm-
Continuous Collector Current-145 A-
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