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| PartNumber | IXTY4N65X2-TRL | IXTY4N65X2 | IXTY4N60P |
| Description | Discrete Semiconductor Modules X2-Class Power MOSFET | MOSFET DISCMSFT NCHULTRAJNCTN X2CLASS | IGBT Transistors MOSFET PolarHV Power MOSFET |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | Discrete Semiconductor Modules | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Product | Power MOSFET Modules | - | - |
| Type | X2-Class | - | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | X2-Class | X2-Class | IXTY4N60 |
| Packaging | Reel | Tube | Tube |
| Configuration | Single | Single | - |
| Brand | IXYS | IXYS | - |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Fall Time | 25 ns | 25 ns | 20 ns |
| Id Continuous Drain Current | 4 A | 4 A | - |
| Pd Power Dissipation | 80 W | 80 W | - |
| Product Type | Discrete Semiconductor Modules | MOSFET | - |
| Rds On Drain Source Resistance | 850 mOhms | 850 mOhms | - |
| Rise Time | 28 ns | 28 ns | 10 ns |
| Factory Pack Quantity | 2500 | 70 | - |
| Subcategory | Discrete Semiconductor Modules | MOSFETs | - |
| Typical Turn Off Delay Time | 57 ns | 57 ns | 50 ns |
| Typical Turn On Delay Time | 22 ns | 22 ns | 25 ns |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V | - |
| Technology | - | Si | Si |
| Qg Gate Charge | - | 8.3 nC | - |
| Channel Mode | - | Enhancement | Enhancement |
| Tradename | - | HiPerFET | PolarHV |
| Forward Transconductance Min | - | 2.5 S | - |
| Unit Weight | - | 0.081130 oz | 0.081130 oz |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 89 W |
| Vgs Gate Source Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 4 A |
| Vds Drain Source Breakdown Voltage | - | - | 600 V |
| Vgs th Gate Source Threshold Voltage | - | - | 5.5 V |
| Rds On Drain Source Resistance | - | - | 2 Ohms |
| Qg Gate Charge | - | - | 13 nC |
| Forward Transconductance Min | - | - | 2.8 S |