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| PartNumber | IXTY01N100-TRL | IXTY01N100 | IXTY01N10 |
| Description | Discrete Semiconductor Modules High Voltage Power MOSFET | MOSFET 0.1 Amps 1000V 80 Rds | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | Discrete Semiconductor Modules | MOSFET | - |
| RoHS | Y | Y | - |
| Product | Power MOSFET Modules | - | - |
| Type | High Voltage | - | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Packaging | Reel | Tube | - |
| Configuration | Single | Single | - |
| Brand | IXYS | IXYS | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Fall Time | 28 ns | 28 ns | - |
| Id Continuous Drain Current | 100 mA | 100 mA | - |
| Pd Power Dissipation | 25 W | 25 W | - |
| Product Type | Discrete Semiconductor Modules | MOSFET | - |
| Rds On Drain Source Resistance | 80 Ohms | 80 Ohms | - |
| Rise Time | 12 ns | 12 ns | - |
| Factory Pack Quantity | 2500 | 70 | - |
| Subcategory | Discrete Semiconductor Modules | MOSFETs | - |
| Typical Turn Off Delay Time | 40 ns | 28 ns | - |
| Typical Turn On Delay Time | 12 ns | 12 ns | - |
| Vds Drain Source Breakdown Voltage | 1000 V | 1 kV | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Technology | - | Si | - |
| Number of Channels | - | 1 Channel | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 2.38 mm | - |
| Length | - | 6.73 mm | - |
| Series | - | IXTY01N100 | - |
| Transistor Type | - | 1 N-Channel | - |
| Width | - | 6.22 mm | - |
| Forward Transconductance Min | - | 160 mS | - |
| Unit Weight | - | 0.012346 oz | - |