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| PartNumber | IXTX660N04T4 | IXTX600N04T2 | IXTX60N50L2 |
| Description | Discrete Semiconductor Modules Disc MSFT NChTrenchGate-Gen4 TO-247AD | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | MOSFET 60 Amps 500V |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | Discrete Semiconductor Modules | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Product | Power MOSFET Modules | MOSFET Gate Drivers | - |
| Type | TrenchGate-Gen4 | - | - |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | PLUS-247 | PLUS-247-3 |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 175 C | - |
| Packaging | Tube | Tube | Tube |
| Configuration | Single | - | - |
| Brand | IXYS | IXYS | IXYS |
| Transistor Polarity | N-Channel | - | N-Channel |
| Product Type | Discrete Semiconductor Modules | MOSFET | MOSFET |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | Discrete Semiconductor Modules | MOSFETs | MOSFETs |
| Technology | - | Si | Si |
| Pd Power Dissipation | - | 1250 W | - |
| Tradename | - | HiPerFET | LinearL2 |
| Series | - | IXTX600N04 | IXTX60N50 |
| Fall Time | - | 250 ns | - |
| Rise Time | - | 20 ns | - |
| Unit Weight | - | 0.232808 oz | 0.056438 oz |
| Vds Drain Source Breakdown Voltage | - | - | 500 V |
| Id Continuous Drain Current | - | - | 60 A |
| Rds On Drain Source Resistance | - | - | 100 mOhms |