PartNumber | IXTT02N450HV | IXTT100N25P | IXTT10N100D |
Description | MOSFET 4500V 200mA HV Power MOSFET | MOSFET 100 Amps 250V 0.027 Rds | MOSFET 10 Amps 1000V 1.4 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-268HV-3 | TO-268-3 | TO-268-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 4.5 kV | 250 V | 1 kV |
Id Continuous Drain Current | 200 mA | 100 A | 10 A |
Rds On Drain Source Resistance | 625 Ohms | 27 mOhms | 1.4 Ohms |
Vgs th Gate Source Threshold Voltage | 4 V | 5 V | 3.5 V |
Vgs Gate Source Voltage | 10 V | 20 V | 30 V |
Qg Gate Charge | 10.6 nC | 185 nC | 130 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 113 W | 600 W | 400 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | Tube | Tube |
Series | IXTT02N450 | IXTT100N25 | IXTT10N100 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | IXYS | IXYS | IXYS |
Forward Transconductance Min | 90 mS | 40 S | 3 S |
Fall Time | 143 ns | 28 ns | 75 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 48 ns | 26 ns | 85 ns |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 28 ns | 100 ns | 110 ns |
Typical Turn On Delay Time | 17 ns | 25 ns | 35 ns |
Unit Weight | 0.229281 oz | 0.158733 oz | 0.158733 oz |
Tradename | - | PolarHT | - |
Height | - | 5.1 mm | 5.1 mm |
Length | - | 14 mm | 14 mm |
Type | - | PolarHT Power MOSFET | High Voltage MOSFET |
Width | - | 16.05 mm | 16.05 mm |