IXTT02N450HV vs IXTT100N25P vs IXTT10N100D

 
PartNumberIXTT02N450HVIXTT100N25PIXTT10N100D
DescriptionMOSFET 4500V 200mA HV Power MOSFETMOSFET 100 Amps 250V 0.027 RdsMOSFET 10 Amps 1000V 1.4 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-268HV-3TO-268-3TO-268-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage4.5 kV250 V1 kV
Id Continuous Drain Current200 mA100 A10 A
Rds On Drain Source Resistance625 Ohms27 mOhms1.4 Ohms
Vgs th Gate Source Threshold Voltage4 V5 V3.5 V
Vgs Gate Source Voltage10 V20 V30 V
Qg Gate Charge10.6 nC185 nC130 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation113 W600 W400 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingTubeTubeTube
SeriesIXTT02N450IXTT100N25IXTT10N100
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandIXYSIXYSIXYS
Forward Transconductance Min90 mS40 S3 S
Fall Time143 ns28 ns75 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time48 ns26 ns85 ns
Factory Pack Quantity303030
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time28 ns100 ns110 ns
Typical Turn On Delay Time17 ns25 ns35 ns
Unit Weight0.229281 oz0.158733 oz0.158733 oz
Tradename-PolarHT-
Height-5.1 mm5.1 mm
Length-14 mm14 mm
Type-PolarHT Power MOSFETHigh Voltage MOSFET
Width-16.05 mm16.05 mm
Top