IXTQ30N50L2 vs IXTQ30N50L vs IXTQ30N50P

 
PartNumberIXTQ30N50L2IXTQ30N50LIXTQ30N50P
DescriptionMOSFET LINEAR L2 SERIES MOSFET 500V 30AMOSFET 30 Amps 500VMOSFET 30.0 Amps 500 V 0.2 Ohm Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-3P-3TO-3P-3TO-3P-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage500 V500 V500 V
Id Continuous Drain Current30 A30 A30 A
Rds On Drain Source Resistance200 mOhms200 mOhms165 mOhms
Vgs th Gate Source Threshold Voltage4.5 V-5 V
Vgs Gate Source Voltage20 V-30 V
Qg Gate Charge240 nC-70 nC
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation400 W-460 W
ConfigurationSingleSingleSingle
Channel ModeEnhancement-Enhancement
TradenameLinear L2-PolarHV
PackagingTubeTubeTube
Height20.3 mm-20.3 mm
Length15.8 mm-15.8 mm
SeriesIXTQ30N50IXTQ30N50IXTQ30N50
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypeLinear L2 Power MOSFET-PolarHV Power MOSFET
Width4.9 mm-4.9 mm
BrandIXYSIXYSIXYS
Forward Transconductance Min9 S-17 S
Fall Time40 ns-21 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time117 ns-27 ns
Factory Pack Quantity303030
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time94 ns-75 ns
Typical Turn On Delay Time35 ns-25 ns
Unit Weight0.194007 oz0.194007 oz0.194007 oz
Top