PartNumber | IXTP230N04T4 | IXTP230N04T4M | IXTP230N075T2 |
Description | Discrete Semiconductor Modules Disc MSFT NChTrenchGate-Gen4 TO-220AB/FP | Discrete Semiconductor Modules Disc MSFT NChTrenchGate-Gen4 TO-220AB/FP | MOSFET 230 Amps 75V |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | Discrete Semiconductor Modules | Discrete Semiconductor Modules | MOSFET |
RoHS | Y | Y | Y |
Product | Power MOSFET Modules | Power MOSFET Modules | - |
Type | Trench T4 | Trench T4 | - |
Vgs Gate Source Voltage | 10 V | 10 V | 20 V |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220AB-3 | TO-220AB-3 | TO-220-3 |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Packaging | Tube | Tube | Tube |
Configuration | Single | Single | Single |
Brand | IXYS | IXYS | IXYS |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Fall Time | 82 ns | 82 ns | 15 ns |
Id Continuous Drain Current | 230 A | 230 A | 230 A |
Pd Power Dissipation | 340 W | 340 W | 480 W |
Product Type | Discrete Semiconductor Modules | Discrete Semiconductor Modules | MOSFET |
Rds On Drain Source Resistance | 2.9 mOhms | 2.9 mOhms | 4.2 mOhms |
Rise Time | 143 ns | 143 ns | 18 ns |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | Discrete Semiconductor Modules | Discrete Semiconductor Modules | MOSFETs |
Tradename | TrenchT4 | TrenchT4 | HiPerFET |
Typical Turn Off Delay Time | 85 ns | 85 ns | 33 ns |
Typical Turn On Delay Time | 40 ns | 40 ns | 23 ns |
Vds Drain Source Breakdown Voltage | 40 V | 40 V | 75 V |
Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
Technology | - | - | Si |
Number of Channels | - | - | 1 Channel |
Qg Gate Charge | - | - | 178 nC |
Channel Mode | - | - | Enhancement |
Series | - | - | IXTP230N075 |
Transistor Type | - | - | 1 N-Channel |
Forward Transconductance Min | - | - | 50 S |
Unit Weight | - | - | 0.081130 oz |