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| PartNumber | IXTH110N10L2 | IXTH110N25T | IXTH11N80 |
| Description | MOSFET L2 Linear Power MOSFET | MOSFET 110 Amps 250V | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247-3 | TO-247-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 250 V | - |
| Id Continuous Drain Current | 110 A | 110 A | - |
| Rds On Drain Source Resistance | 18 mOhms | 24 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 260 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 600 W | 694 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Tube | - |
| Series | IXTH110N10 | IXTH110N25 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | IXYS | IXYS | - |
| Forward Transconductance Min | 45 S | - | - |
| Fall Time | 24 ns | 27 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 130 ns | 27 ns | - |
| Factory Pack Quantity | 30 | 30 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 99 ns | 60 ns | - |
| Typical Turn On Delay Time | 28 ns | 19 ns | - |
| Unit Weight | 0.056438 oz | 0.229281 oz | - |
| Tradename | - | HiPerFET | - |
| Height | - | 21.46 mm | - |
| Length | - | 16.26 mm | - |
| Width | - | 5.3 mm | - |