IXGT32N170 vs IXGT32N170-TRL vs IXGT32N170 T

 
PartNumberIXGT32N170IXGT32N170-TRLIXGT32N170 T
DescriptionIGBT Transistors 72 Amps 1700 V 3.3 V RdsIGBT Transistors IXGT32N170 TRL
ManufacturerIXYSIXYS-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySi--
Package / CaseTO-268-3--
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1.7 kV--
Collector Emitter Saturation Voltage2.5 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C75 A--
Pd Power Dissipation350 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesIXGT32N170--
PackagingTubeReel-
Continuous Collector Current Ic Max200 A--
Height5.1 mm--
Length16.05 mm--
Operating Temperature Range- 55 C to + 150 C--
Width14 mm--
BrandIXYSIXYS-
Continuous Collector Current75 A--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity30400-
SubcategoryIGBTsIGBTs-
Unit Weight0.158733 oz--
Tradename-0-
Top