IXGR48N60B3D1 vs IXGR48N60B3D4A vs IXGR48N60

 
PartNumberIXGR48N60B3D1IXGR48N60B3D4AIXGR48N60
DescriptionIGBT Transistors 48 Amps 600V 1.7 RdsIGBT Transistors 48 Amps 600V 2 Rds
ManufacturerIXYSIXYS-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseISOPLUS 247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.77 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C60 A--
Pd Power Dissipation150 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesIXGR48N60IXGR48N60-
PackagingTubeTube-
Continuous Collector Current Ic Max280 A--
Height21.34 mm--
Length16.13 mm--
Operating Temperature Range- 55 C to + 150 C--
Width5.21 mm--
BrandIXYSIXYS-
Continuous Collector Current60 A--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity3030-
SubcategoryIGBTsIGBTs-
TradenameGenX3--
Unit Weight0.186952 oz--
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