PartNumber | IXGK50N120C3H1 | IXGK50N60 | IXGK50N60A2D1 |
Description | IGBT Modules High Frequency Range 40khz C-IGBT w/Diode | ||
Manufacturer | IXYS | - | - |
Product Category | IGBT Modules | - | - |
Product | IGBT Silicon Modules | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 1.2 kV | - | - |
Collector Emitter Saturation Voltage | 2.6 V | - | - |
Continuous Collector Current at 25 C | 95 A | - | - |
Gate Emitter Leakage Current | 100 nA | - | - |
Package / Case | TO-264-3 | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Packaging | Tube | - | - |
Series | IXGK50N120 | - | - |
Brand | IXYS | - | - |
Mounting Style | Through Hole | - | - |
Maximum Gate Emitter Voltage | 20 V | - | - |
Product Type | IGBT Modules | - | - |
Factory Pack Quantity | 25 | - | - |
Subcategory | IGBTs | - | - |
Unit Weight | 0.352740 oz | - | - |