IXGH32N170 vs IXGH32N120A3 vs IXGH32N100A3

 
PartNumberIXGH32N170IXGH32N120A3IXGH32N100A3
DescriptionIGBT Transistors 72 Amps 1700 V 3.3 V RdsIGBT Transistors 32 Amps 1200VIGBT Transistors 32 Amps 1000V
ManufacturerIXYSIXYSIXYS
Product CategoryIGBT TransistorsIGBT TransistorsIGBTs - Single
RoHSYY-
TechnologySiSi-
Package / CaseTO-247AD-3TO-247AD-3-
Mounting StyleThrough HoleThrough HoleThrough Hole
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max1700 V1200 V-
Maximum Gate Emitter Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesIXGH32N170IXGH32N120GenX3
PackagingTubeTubeTube
Continuous Collector Current Ic Max75 A75 A-
Height21.46 mm21.46 mm-
Length16.26 mm16.26 mm-
Width5.3 mm5.3 mm-
BrandIXYSIXYS-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity3030-
SubcategoryIGBTsIGBTs-
Unit Weight0.229281 oz0.229281 oz1.340411 oz
Package Case--TO-247-3
Input Type--Standard
Mounting Type--Through Hole
Supplier Device Package--TO-247AD (IXGH)
Power Max--300W
Reverse Recovery Time trr---
Current Collector Ic Max--75A
Voltage Collector Emitter Breakdown Max--1000V
IGBT Type--PT
Current Collector Pulsed Icm--200A
Vce on Max Vge Ic--2.2V @ 15V, 32A
Switching Energy--2.6mJ (on), 9.5mJ (off)
Gate Charge--87nC
Td on off 25°C--24ns/385ns
Test Condition--800V, 32A, 10 Ohm, 15V
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