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| PartNumber | IXGH30N120B3D1 | IXGH30N120 | IXGH30N120BD1 |
| Description | IGBT Transistors 60 Amps 1200V | MOSFET 50 Amps 1200V 3.5 V Rds | |
| Manufacturer | IXYS | - | IXYS |
| Product Category | IGBT Transistors | - | IGBTs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Package / Case | TO-247AD-3 | - | - |
| Mounting Style | Through Hole | - | Through Hole |
| Collector Emitter Voltage VCEO Max | 1.2 kV | - | - |
| Collector Emitter Saturation Voltage | 2.96 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 50 A | - | - |
| Pd Power Dissipation | 300 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | IXGH30N120 | - | IXGH30N120 |
| Packaging | Tube | - | Tube |
| Continuous Collector Current Ic Max | 150 A | - | - |
| Height | 21.46 mm | - | - |
| Length | 16.26 mm | - | - |
| Operating Temperature Range | - 55 C to + 150 C | - | - |
| Width | 5.3 mm | - | - |
| Brand | IXYS | - | - |
| Continuous Collector Current | 30 A | - | - |
| Gate Emitter Leakage Current | 100 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 30 | - | - |
| Subcategory | IGBTs | - | - |
| Tradename | GenX3 | - | - |
| Unit Weight | 0.229281 oz | - | 0.229281 oz |
| Package Case | - | - | TO-247-3 |
| Input Type | - | - | Standard |
| Mounting Type | - | - | Through Hole |
| Supplier Device Package | - | - | TO-247AD (IXGH) |
| Power Max | - | - | - |
| Reverse Recovery Time trr | - | - | - |
| Current Collector Ic Max | - | - | 50A |
| Voltage Collector Emitter Breakdown Max | - | - | 1200V |
| IGBT Type | - | - | - |
| Current Collector Pulsed Icm | - | - | - |
| Vce on Max Vge Ic | - | - | - |
| Switching Energy | - | - | - |
| Gate Charge | - | - | - |
| Td on off 25°C | - | - | - |
| Test Condition | - | - | - |
| Id Continuous Drain Current | - | - | 50 A |
| Vds Drain Source Breakdown Voltage | - | - | 1200 V |