IRGR2B60KDPBF vs IRGR2B60KDTRLPBF vs IRGR2B60KD

 
PartNumberIRGR2B60KDPBFIRGR2B60KDTRLPBFIRGR2B60KD
DescriptionIGBT Transistors 600V IGBT Ultrafast 3.7A 1.95VIGBT Transistors 600V IGBT Ultrafast 3.7A 1.95V
ManufacturerInfineonInfineonInfineon Technologies
Product CategoryIGBT TransistorsIGBT TransistorsIGBTs - Single
RoHSYY-
TechnologySiSi-
Package / CaseTO-252-3TO-252-3-
Mounting StyleSMD/SMTSMD/SMT-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max600 V600 V-
Collector Emitter Saturation Voltage1.95 V1.95 V-
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C6.3 A6.3 A-
Pd Power Dissipation35 W35 W-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesRCRC-
PackagingTubeReelTube Alternate Packaging
Height4.57 mm--
Length10.31 mm--
Width9.45 mm--
BrandInfineon / IRInfineon / IR-
Gate Emitter Leakage Current100 nA100 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity30003000-
SubcategoryIGBTsIGBTs-
TradenameTRENCHSTOPTRENCHSTOP-
Part # AliasesSP001534018SP001548348-
Unit Weight0.035274 oz0.011993 oz-
Package Case--TO-252-3, DPak (2 Leads + Tab), SC-63
Input Type--Standard
Mounting Type--Surface Mount
Supplier Device Package--D-Pak
Power Max--35W
Reverse Recovery Time trr--68ns
Current Collector Ic Max--6.3A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type--NPT
Current Collector Pulsed Icm--8A
Vce on Max Vge Ic--2.25V @ 15V, 2A
Switching Energy--74μJ (on), 39μJ (off)
Gate Charge--12nC
Td on off 25°C--11ns/150ns
Test Condition--400V, 2A, 100 Ohm, 15V
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