IRG7PH30K10DPBF vs IRG7PH30K10 vs IRG7PH30K10D

 
PartNumberIRG7PH30K10DPBFIRG7PH30K10IRG7PH30K10D
DescriptionIGBT Transistors 1200V 30A
ManufacturerInfineonIRIR
Product CategoryIGBT TransistorsIGBTs - SingleIGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough HoleThrough HoleThrough Hole
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max1.2 kV--
Collector Emitter Saturation Voltage2.35 V2.35 V2.35 V
Maximum Gate Emitter Voltage30 V+/- 30 V+/- 30 V
Continuous Collector Current at 25 C30 A30 A30 A
Pd Power Dissipation180 W--
Minimum Operating Temperature- 55 C- 55 C- 55 C
PackagingTubeTubeTube
Height20.7 mm--
Length15.87 mm--
Width5.31 mm--
BrandInfineon / IR--
Product TypeIGBT Transistors--
Factory Pack Quantity25--
SubcategoryIGBTs--
Part # AliasesSP001549446--
Unit Weight1.340411 oz38 g38 g
Series---
Package Case-TO-247-3TO-247-3
Input Type-StandardStandard
Mounting Type-Through HoleThrough Hole
Supplier Device Package-TO-247ACTO-247AC
Power Max-180W180W
Reverse Recovery Time trr-140ns140ns
Current Collector Ic Max-30A30A
Voltage Collector Emitter Breakdown Max-1200V1200V
IGBT Type-TrenchTrench
Current Collector Pulsed Icm-27A27A
Vce on Max Vge Ic-2.35V @ 15V, 9A2.35V @ 15V, 9A
Switching Energy-530μJ (on), 380μJ (off)530μJ (on), 380μJ (off)
Gate Charge-45nC45nC
Td on off 25°C-14ns/110ns14ns/110ns
Test Condition-600V, 9A, 22 Ohm, 15V600V, 9A, 22 Ohm, 15V
Pd Power Dissipation-180 W180 W
Collector Emitter Voltage VCEO Max-1.2 kV1.2 kV
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