IRFZ34NSTRLPBF vs IRFZ34NSTRR vs IRFZ34NSTRLPBF-CUT TAPE

 
PartNumberIRFZ34NSTRLPBFIRFZ34NSTRRIRFZ34NSTRLPBF-CUT TAPE
DescriptionMOSFET MOSFT 55V 29A 40mOhm 22.7nCMOSFET N-CH 55V 29A D2PAK
ManufacturerInfineonIR-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage55 V--
Id Continuous Drain Current29 A--
Rds On Drain Source Resistance40 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge22.7 nC--
Pd Power Dissipation68 W--
ConfigurationSingleSingle-
PackagingReelReel-
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm--
BrandInfineon Technologies--
Product TypeMOSFET--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Part # AliasesSP001568092--
Unit Weight0.139332 oz0.139332 oz-
Package Case-TO-252-3-
Pd Power Dissipation-68 W-
Maximum Operating Temperature-+ 175 C-
Minimum Operating Temperature-- 55 C-
Fall Time-40 ns-
Rise Time-49 ns-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-29 A-
Vds Drain Source Breakdown Voltage-55 V-
Vgs th Gate Source Threshold Voltage-4 V-
Rds On Drain Source Resistance-40 mOhms-
Typical Turn Off Delay Time-31 ns-
Typical Turn On Delay Time-7 ns-
Qg Gate Charge-34 nC-
Forward Transconductance Min-6.5 S-
Channel Mode-Enhancement-
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