IRFR13N20DTRLP vs IRFR13N20DTRL vs IRFR13N20DTR

 
PartNumberIRFR13N20DTRLPIRFR13N20DTRLIRFR13N20DTR
DescriptionMOSFET MOSFT 200V 14A 235mOhm 25nCMOSFET N-CH 200V 13A DPAKMOSFET N-CH 200V 13A DPAK
ManufacturerInfineon-IR
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-252-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current14 A--
Rds On Drain Source Resistance165 mOhms--
Vgs Gate Source Voltage30 V--
Qg Gate Charge25 nC--
Minimum Operating Temperature- 55 C-- 55 C
Pd Power Dissipation110 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
PackagingReel-Reel
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel-1 N-Channel
Width6.22 mm--
BrandInfineon / IR--
Fall Time10 ns-10 ns
Product TypeMOSFET--
Rise Time27 ns-27 ns
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time17 ns-17 ns
Typical Turn On Delay Time11 ns-11 ns
Part # AliasesSP001560582--
Unit Weight0.139332 oz-0.139332 oz
Package Case--TO-252-3
Pd Power Dissipation--110 W
Vgs Gate Source Voltage--30 V
Id Continuous Drain Current--14 A
Vds Drain Source Breakdown Voltage--200 V
Rds On Drain Source Resistance--165 mOhms
Qg Gate Charge--25 nC
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