PartNumber | IRFH7190TRPBF | IRFH7191TRPBF | IRFH7190ATRPBF |
Description | MOSFET TRENCH_MOSFETS | MOSFET HEXFET 100V N CHANNEL | MOSFET N-CH 8-TDSON |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | PQFN-8 | PQFN-8 | - |
Tradename | StrongIRFET | StrongIRFET | - |
Packaging | Reel | Reel | - |
Height | 0.83 mm | 0.83 mm | - |
Length | 6 mm | 6 mm | - |
Width | 5 mm | 5 mm | - |
Brand | Infineon / IR | Infineon / IR | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 4000 | 4000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Part # Aliases | SP001560410 | SP001556364 | - |
Number of Channels | - | 1 Channel | - |
Transistor Polarity | - | N-Channel | - |
Vds Drain Source Breakdown Voltage | - | 100 V | - |
Id Continuous Drain Current | - | 80 A | - |
Rds On Drain Source Resistance | - | 8 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 3.6 V | - |
Vgs Gate Source Voltage | - | 20 V | - |
Qg Gate Charge | - | 26 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 104 W | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | - |
Forward Transconductance Min | - | 112 S | - |
Fall Time | - | 3.6 ns | - |
Rise Time | - | 6.1 ns | - |
Typical Turn Off Delay Time | - | 10.6 ns | - |
Typical Turn On Delay Time | - | 4.5 ns | - |