IRFB18N50KPBF vs IRFB18N50K vs IRFB18N50KPPBF

 
PartNumberIRFB18N50KPBFIRFB18N50KIRFB18N50KPPBF
DescriptionMOSFET RECOMMENDED ALT 781-SIHP18N50C-E3MOSFET RECOMMENDED ALT 844-IRFB18N50KPBF
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSEN-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current17 A--
Rds On Drain Source Resistance290 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge120 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation220 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTubeTube-
Height15.49 mm15.49 mm-
Length10.41 mm10.41 mm-
SeriesIRFBIRFB-
Transistor Type1 N-Channel--
Width4.7 mm4.7 mm-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min6.4 S--
Fall Time30 ns--
Product TypeMOSFETMOSFET-
Rise Time60 ns--
Factory Pack Quantity5050-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time45 ns--
Typical Turn On Delay Time22 ns--
Unit Weight0.211644 oz0.211644 oz-
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