IRF9952TRPBF vs IRF9952TRPBF-CUT TAPE vs IRF9952TR

 
PartNumberIRF9952TRPBFIRF9952TRPBF-CUT TAPEIRF9952TR
DescriptionMOSFET MOSFT DUAL N/PCh 30V 3.5AMOSFET N/P-CH 30V 8-SOIC
ManufacturerInfineon-Infineon Technologies
Product CategoryMOSFET-FETs - Arrays
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel, P-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current3.5 A--
Rds On Drain Source Resistance150 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge6.9 nC--
Pd Power Dissipation2 W--
ConfigurationDual--
PackagingReel-Tape & Reel (TR)
Height1.75 mm--
Length4.9 mm--
Transistor Type1 N-Channel, 1 P-Channel--
Width3.9 mm--
BrandInfineon Technologies--
Product TypeMOSFET--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Part # AliasesSP001555914--
Unit Weight0.019048 oz--
Series--HEXFETR
Package Case--8-SOIC (0.154", 3.90mm Width)
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--8-SO
FET Type--N and P-Channel
Power Max--2W
Drain to Source Voltage Vdss--30V
Input Capacitance Ciss Vds--190pF @ 15V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--3.5A, 2.3A
Rds On Max Id Vgs--100 mOhm @ 2.2A, 10V
Vgs th Max Id--1V @ 250μA
Gate Charge Qg Vgs--14nC @ 10V
Top