IRF820PBF vs IRF820PBF,F820,IRF820 vs IRF820PBF,IRF820

 
PartNumberIRF820PBFIRF820PBF,F820,IRF820IRF820PBF,IRF820
DescriptionMOSFET N-CH 500V HEXFET MOSFET
ManufacturerVishay--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220AB-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current2.5 A--
Rds On Drain Source Resistance3 Ohms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge24 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation50 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height15.49 mm--
Length10.41 mm--
SeriesIRF--
Transistor Type1 N-Channel--
Width4.7 mm--
BrandVishay / Siliconix--
Forward Transconductance Min1.5 S--
Fall Time16 ns--
Product TypeMOSFET--
Rise Time8.6 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time33 ns--
Typical Turn On Delay Time8 ns--
Unit Weight0.211644 oz--
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