IRF7504TRPBF vs IRF7504TRPBF-CUT TAPE vs IRF7504TR

 
PartNumberIRF7504TRPBFIRF7504TRPBF-CUT TAPEIRF7504TR
DescriptionMOSFET MOSFT DUAL PCh -20V 1.7A Micro 8MOSFET 2P-CH 20V 1.7A MICRO8
ManufacturerInfineon-Infineon Technologies
Product CategoryMOSFET-FETs - Arrays
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseMicro-8--
Number of Channels2 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current1.7 A--
Rds On Drain Source Resistance270 mOhms--
Vgs Gate Source Voltage12 V--
Qg Gate Charge5.4 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.25 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel-Digi-ReelR
Height1.11 mm--
Length3 mm--
Transistor Type2 P-Channel--
Width3 mm--
BrandInfineon / IR--
Forward Transconductance Min1.3 S--
Fall Time43 ns--
Product TypeMOSFET--
Rise Time35 ns--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time38 ns--
Typical Turn On Delay Time9.1 ns--
Part # AliasesSP001551428--
Series--HEXFETR
Package Case--8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--Micro8
FET Type--2 P-Channel (Dual)
Power Max--1.25W
Drain to Source Voltage Vdss--20V
Input Capacitance Ciss Vds--240pF @ 15V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--1.7A
Rds On Max Id Vgs--270 mOhm @ 1.2A, 4.5V
Vgs th Max Id--700mV @ 250μA
Gate Charge Qg Vgs--8.2nC @ 4.5V
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