IRF7406GTRPBF vs IRF7406 vs IRF7406PBF

 
PartNumberIRF7406GTRPBFIRF7406IRF7406PBF
DescriptionMOSFET MOSFT PCh -30V -5.8A 45mOhm 39.3nC6.7 A, 30 V, 0.045 ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AAMOSFET P-CH 30V 5.8A 8-SOIC
ManufacturerInfineonIRIR
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSO-8--
Number of Channels1 Channel-1 Channel
Transistor PolarityP-Channel-P-Channel
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current5.8 A--
Rds On Drain Source Resistance45 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Qg Gate Charge59 nC--
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation2.5 W--
ConfigurationSingle-Single Quad Drain Triple Source
PackagingReel-Tube
Height1.75 mm--
Length4.9 mm--
Transistor Type1 P-Channel-1 P-Channel
Width3.9 mm--
BrandInfineon / IR--
Forward Transconductance Min3.1 S--
Fall Time47 ns-47 ns
Product TypeMOSFET--
Rise Time33 ns-33 ns
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Part # AliasesSP001563604--
Unit Weight0.019048 oz-0.017870 oz
Package Case--SO-8
Pd Power Dissipation--2.5 W
Minimum Operating Temperature--- 55 C
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--- 5.8 A
Vds Drain Source Breakdown Voltage--- 30 V
Vgs th Gate Source Threshold Voltage--- 1 V
Rds On Drain Source Resistance--70 mOhms
Typical Turn Off Delay Time--45 ns
Typical Turn On Delay Time--16 ns
Qg Gate Charge--59 nC
Forward Transconductance Min--3.1 S
Channel Mode--Enhancement
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