IRF7389PBF vs IRF7389 vs IRF7389PBF-1

 
PartNumberIRF7389PBFIRF7389IRF7389PBF-1
DescriptionMOSFET 30V DUAL N / P CH 20V VGS MAXMOSFET N/P-CH 30V 8-SOIC
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel, P-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current7.3 A--
Rds On Drain Source Resistance58 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge22 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingTube--
Height1.75 mm--
Length4.9 mm--
Transistor Type1 N-Channel, 1 P-Channel--
TypePower MOSFET--
Width3.9 mm--
BrandInfineon Technologies--
Forward Transconductance Min14 S--
Fall Time17 ns, 32 ns--
Product TypeMOSFET--
Rise Time8.9 ns, 13 ns--
Factory Pack Quantity3800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time26 ns, 34 ns--
Typical Turn On Delay Time8.1 ns, 13 ns--
Part # AliasesSP001574944--
Unit Weight0.019048 oz--
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