PartNumber | IRF7329 | IRF7329PBF | IRF7329TR |
Description | Trans MOSFET P-CH Si 12V 9.2A 8-Pin SOIC Tube | MOSFET 2P-CH 12V 9.2A 8-SOIC | |
Manufacturer | IR | Infineon Technologies | Infineon Technologies |
Product Category | FETs - Arrays | FETs - Arrays | FETs - Arrays |
Series | - | HEXFETR | HEXFETR |
Packaging | - | Tube Alternate Packaging | Tape & Reel (TR) |
Unit Weight | - | 0.019048 oz | - |
Mounting Style | - | SMD/SMT | - |
Package Case | - | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
Technology | - | Si | - |
Operating Temperature | - | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Mounting Type | - | Surface Mount | Surface Mount |
Number of Channels | - | 2 Channel | - |
Supplier Device Package | - | 8-SO | 8-SO |
Configuration | - | Dual | - |
FET Type | - | 2 P-Channel (Dual) | 2 P-Channel (Dual) |
Power Max | - | 2W | 2W |
Transistor Type | - | 2 P-Channel | - |
Drain to Source Voltage Vdss | - | 12V | 12V |
Input Capacitance Ciss Vds | - | 3450pF @ 10V | 3450pF @ 10V |
FET Feature | - | Logic Level Gate | Logic Level Gate |
Current Continuous Drain Id 25°C | - | 9.2A | 9.2A |
Rds On Max Id Vgs | - | 17 mOhm @ 9.2A, 4.5V | 17 mOhm @ 9.2A, 4.5V |
Vgs th Max Id | - | 900mV @ 250μA | 900mV @ 250μA |
Gate Charge Qg Vgs | - | 57nC @ 4.5V | 57nC @ 4.5V |
Pd Power Dissipation | - | 2 W | - |
Maximum Operating Temperature | - | + 150 C | - |
Minimum Operating Temperature | - | - 55 C | - |
Fall Time | - | 260 ns | - |
Rise Time | - | 8.6 ns | - |
Vgs Gate Source Voltage | - | 8 V | - |
Id Continuous Drain Current | - | - 9.2 A | - |
Vds Drain Source Breakdown Voltage | - | - 12 V | - |
Rds On Drain Source Resistance | - | 17 mOhms | - |
Transistor Polarity | - | P-Channel | - |
Typical Turn Off Delay Time | - | 340 ns | - |
Typical Turn On Delay Time | - | 10 ns | - |
Qg Gate Charge | - | 38 nC | - |
Channel Mode | - | Enhancement | - |