PartNumber | IRF540ZSTRL | IRF540ZS | IRF540ZSPBF |
Description | MOSFET N-CH 100V 36A D2PAK | MOSFET N-CH 100V 36A D2PAK | Darlington Transistors MOSFET 100V 1 N-CH HEXFET 26.5mOhms 42nC |
Manufacturer | - | IR | IR |
Product Category | - | FETs - Single | FETs - Single |
Packaging | - | Tube | Tube |
Unit Weight | - | 0.139332 oz | 0.139332 oz |
Mounting Style | - | SMD/SMT | SMD/SMT |
Package Case | - | TO-252-3 | TO-252-3 |
Technology | - | Si | Si |
Number of Channels | - | 1 Channel | 1 Channel |
Configuration | - | Single | Single |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Pd Power Dissipation | - | 92 W | 92 W |
Maximum Operating Temperature | - | + 175 C | + 175 C |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Fall Time | - | 39 ns | 39 ns |
Rise Time | - | 51 ns | 51 ns |
Vgs Gate Source Voltage | - | 20 V | 20 V |
Id Continuous Drain Current | - | 36 A | 36 A |
Vds Drain Source Breakdown Voltage | - | 100 V | 100 V |
Rds On Drain Source Resistance | - | 26.5 mOhms | 26.5 mOhms |
Transistor Polarity | - | N-Channel | N-Channel |
Typical Turn Off Delay Time | - | 43 ns | 43 ns |
Typical Turn On Delay Time | - | 15 ns | 15 ns |
Qg Gate Charge | - | 42 nC | 42 nC |
Channel Mode | - | Enhancement | Enhancement |