 | | | |
| PartNumber | IPW65R310CFD 65F6310 | IPW65R310CFD | IPW65R310CFDAFKSA1 |
| Description | IGBT Transistors MOSFET N-Ch 650V 11.4A TO247-3 CoolMOS CFD2 | RF Bipolar Transistors MOSFET N-Ch 700V 11.4A TO247-3 | |
| Manufacturer | - | Infineon Technologies | Infineon Technologies |
| Product Category | - | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
| Series | - | CoolMOS CFD2 | IPW65R310 |
| Packaging | - | Tube | Tube |
| Part Aliases | - | IPW65R310CFDFKSA1 IPW65R310CFDXK SP000890688 | SP000879444 |
| Unit Weight | - | 1.340411 oz | 1.340411 oz |
| Mounting Style | - | Through Hole | - |
| Tradename | - | CoolMOS | CoolMOS |
| Package Case | - | TO-247-3 | TO-247-3 |
| Technology | - | Si | Si |
| Number of Channels | - | 1 Channel | 1 Channel |
| Configuration | - | Single | - |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Pd Power Dissipation | - | 104.2 W | - |
| Fall Time | - | 7 ns | - |
| Rise Time | - | 7.5 ns | - |
| Vgs Gate Source Voltage | - | 30 V | - |
| Id Continuous Drain Current | - | 11.4 A | 11.4 A |
| Vds Drain Source Breakdown Voltage | - | 650 V | 700 V |
| Vgs th Gate Source Threshold Voltage | - | 4 V | - |
| Rds On Drain Source Resistance | - | 310 mOhms | 310 mOhms |
| Transistor Polarity | - | N-Channel | N-Channel |
| Qg Gate Charge | - | 41 nC | - |