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| PartNumber | IPP60R090CFD7XKSA1 | IPP60R099C6 | IPP60R099C6 6R099C6 |
| Description | MOSFET HIGH POWER_NEW | MOSFET N-Ch 650V 38A TO220-3 CoolMOS C6 | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
| Id Continuous Drain Current | 25 A | 37.9 A | - |
| Rds On Drain Source Resistance | 90 mOhms | 90 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3.5 V | 2.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 51 nC | 119 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 125 W | 278 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Tube | - |
| Series | CoolMOS CFD7 | CoolMOS C6 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 6 ns | 6 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 17 ns | 12 ns | - |
| Factory Pack Quantity | 500 | 500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 88 ns | 75 ns | - |
| Typical Turn On Delay Time | 33 ns | 15 ns | - |
| Part # Aliases | IPP60R090CFD7 SP001686050 | IPP60R099C6XKSA1 IPP6R99C6XK SP000687556 | - |
| Tradename | - | CoolMOS | - |
| Height | - | 15.65 mm | - |
| Length | - | 10 mm | - |
| Width | - | 4.4 mm | - |
| Unit Weight | - | 0.211644 oz | - |