IPL65R650C6SATMA1 vs IPL65R650C6S vs IPL65R660E6

 
PartNumberIPL65R650C6SATMA1IPL65R650C6SIPL65R660E6
DescriptionMOSFET N-Ch 650V 6.7A ThinPAK 5x6MOSFET LOW POWER PRICE/PERFORM
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseThinPAK-56-8--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current6.7 A--
Rds On Drain Source Resistance650 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge21 nC--
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation56.8 W--
ConfigurationSingleSingle-
TradenameCoolMOSCoolMOS-
PackagingReelReel-
Height1.1 mm--
Length6 mm--
SeriesCoolMOS C6XPL65R650-
Transistor Type1 N-Channel1 N-Channel-
Width5 mm--
BrandInfineon Technologies--
Fall Time13 ns13 ns-
Product TypeMOSFET--
Rise Time9 ns9 ns-
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time80 ns80 ns-
Typical Turn On Delay Time12 ns12 ns-
Part # AliasesIPL65R650C6S SP001163082--
Unit Weight0.002677 oz--
Part Aliases-IPL65R650C6S SP001163082-
Package Case-SON-8-
Pd Power Dissipation-56.8 W-
Vgs Gate Source Voltage-30 V-
Id Continuous Drain Current-6.7 A-
Vds Drain Source Breakdown Voltage-650 V-
Vgs th Gate Source Threshold Voltage-3 V-
Rds On Drain Source Resistance-650 mOhms-
Qg Gate Charge-21 nC-
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