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| PartNumber | IPL60R105P7AUMA1 | IPL60R104C7AUMA1 | IPL60R104C7 |
| Description | MOSFET HIGH POWER_NEW | MOSFET HIGH POWER_NEW | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | VSON-4 | VSON-4 | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
| Id Continuous Drain Current | 33 A | - | - |
| Rds On Drain Source Resistance | 85 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 45 nC | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 137 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Reel | - |
| Series | CoolMOS P7 | CoolMOS C7 | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 5 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 8 ns | - | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 83 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Part # Aliases | IPL60R105P7 SP001657410 | IPL60R104C7 SP001298008 | - |
| Tradename | - | CoolMOS | - |
| Height | - | 1.1 mm | - |
| Length | - | 8 mm | - |
| Width | - | 8 mm | - |