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| PartNumber | IPI60R380C6 | IPI60R380C6XKSA1 | IPI60R385CP |
| Description | MOSFET N-Ch 650V 10.6A I2PAK-3 CoolMOS C6 | MOSFET LOW POWER_LEGACY | Darlington Transistors MOSFET N-Ch 650V 9A I2PAK-3 CoolMOS CP |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-262-3 | TO-262-3 | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | - | - |
| Id Continuous Drain Current | 10.6 A | - | - |
| Rds On Drain Source Resistance | 380 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 32 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 83 W | - | - |
| Configuration | Single | - | Single |
| Tradename | CoolMOS | CoolMOS | CoolMOS |
| Packaging | Tube | Tube | Tube |
| Height | 9.45 mm | 9.45 mm | - |
| Length | 10.2 mm | 10.2 mm | - |
| Series | CoolMOS C6 | - | CoolMOS CP |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 4.5 mm | 4.5 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 9 nS | - | 5 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 10 ns | - | 5 ns |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 110 nS | - | 40 ns |
| Part # Aliases | IPI60R380C6XKSA1 IPI6R38C6XK SP000660630 | IPI60R380C6 IPI6R38C6XK SP000660630 | - |
| Unit Weight | 0.084199 oz | 0.084199 oz | 0.084199 oz |
| Part Aliases | - | - | IPI60R385CPXK IPI60R385CPXKSA1 SP000103250 |
| Package Case | - | - | I2PAK-3 |
| Pd Power Dissipation | - | - | 83 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 9 A |
| Vds Drain Source Breakdown Voltage | - | - | 650 V |
| Rds On Drain Source Resistance | - | - | 385 mOhms |
| Typical Turn On Delay Time | - | - | 10 ns |
| Channel Mode | - | - | Enhancement |