IPI600N25N3 G vs IPI600N25N3GAKSA1 vs IPI600N25N3

 
PartNumberIPI600N25N3 GIPI600N25N3GAKSA1IPI600N25N3
DescriptionMOSFET N-Ch 250V 25A I2PAK-3 OptiMOS 3MOSFET MV POWER MOS
ManufacturerInfineonInfineonInfineon Technologies
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-262-3TO-262-3-
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage250 V--
Id Continuous Drain Current25 A--
Rds On Drain Source Resistance60 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge22 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation136 W--
ConfigurationSingle-Single
TradenameOptiMOSOptiMOSOptiMOS
PackagingTubeTubeTube
Height9.45 mm9.45 mm-
Length10.2 mm10.2 mm-
SeriesOptiMOS 3-OptiMOS 3
Transistor Type1 N-Channel-1 N-Channel
Width4.5 mm4.5 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time8 nS-8 ns
Product TypeMOSFETMOSFET-
Rise Time10 ns-10 ns
Factory Pack Quantity500--
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time22 nS-22 nS
Part # AliasesIPI600N25N3GAKSA1 IPI6N25N3GXK SP000714316G IPI600N25N3 IPI6N25N3GXK SP000714316-
Unit Weight0.084199 oz0.084199 oz0.084199 oz
Part Aliases--IPI600N25N3GAKSA1 IPI600N25N3GXK SP000714316
Package Case--I2PAK-3
Pd Power Dissipation--136 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--25 A
Vds Drain Source Breakdown Voltage--250 V
Rds On Drain Source Resistance--60 mOhms
Qg Gate Charge--22 nC
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