PartNumber | IPI084N06L3GXKSA1 | IPI084N06L3 G | IPI086N10N |
Description | MOSFET N-Ch 60V 50A I2PAK-3 | MOSFET N-Ch 60V 50A I2PAK-3 | |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-262-3 | TO-262-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
Id Continuous Drain Current | 50 A | 50 A | - |
Rds On Drain Source Resistance | 7 mOhms | 7 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 29 nC | 29 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 79 W | 79 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | OptiMOS | OptiMOS | - |
Packaging | Tube | Tube | - |
Height | 9.45 mm | 9.45 mm | - |
Length | 10.2 mm | 10.2 mm | - |
Series | OptiMOS 3 | OptiMOS 3 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 4.5 mm | 4.5 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 35 S | 35 S | - |
Fall Time | 7 ns | 7 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 26 ns | 26 ns | - |
Factory Pack Quantity | 500 | 500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 37 ns | 37 ns | - |
Typical Turn On Delay Time | 15 ns | 15 ns | - |
Part # Aliases | G IPI084N06L3 SP001065242 | IPI084N06L3GXKSA1 SP001065242 | - |
Unit Weight | 0.073511 oz | 0.070548 oz | - |