IPG20N04S4L08AATMA1 vs IPG20N04S4L-08 vs IPG20N04S4L08ATMA1

 
PartNumberIPG20N04S4L08AATMA1IPG20N04S4L-08IPG20N04S4L08ATMA1
DescriptionMOSFET N-CHANNEL_30/40VMOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTDSON-8TDSON-8TDSON-8
Number of Channels1 Channel2 Channel2 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
ConfigurationSingleDualDual
QualificationAEC-Q101AEC-Q101AEC-Q101
PackagingReelReelReel
Height1.27 mm1.27 mm1.27 mm
Length5.9 mm5.9 mm5.9 mm
Transistor Type1 N-Channel2 N-Channel2 N-Channel
Width5.15 mm5.15 mm5.15 mm
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity500050005000
SubcategoryMOSFETsMOSFETsMOSFETs
Part # AliasesIPG20N04S4L-08A SP001265576IPG20N04S4L08ATMA1 IPG2N4S4L8XT SP000705576IPG20N04S4L-08 IPG2N4S4L8XT SP000705576
Vds Drain Source Breakdown Voltage-40 V40 V
Id Continuous Drain Current-20 A20 A
Rds On Drain Source Resistance-7.2 mOhms, 7.2 mOhms7.2 mOhms, 7.2 mOhms
Vgs th Gate Source Threshold Voltage-1.2 V1.2 V
Vgs Gate Source Voltage-16 V16 V
Qg Gate Charge-39 nC, 39 nC39 nC, 39 nC
Minimum Operating Temperature-- 55 C- 55 C
Maximum Operating Temperature-+ 175 C+ 175 C
Pd Power Dissipation-54 W54 W
Channel Mode-EnhancementEnhancement
Tradename-OptiMOSOptiMOS
Series-OptiMOS-T2OptiMOS-T2
Fall Time-20 ns, 20 ns20 ns, 20 ns
Rise Time-3 ns, 3 ns3 ns, 3 ns
Typical Turn Off Delay Time-40 ns, 40 ns40 ns, 40 ns
Typical Turn On Delay Time-7 ns, 7 ns7 ns, 7 ns
Unit Weight--0.003415 oz
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