 | |  | |
| PartNumber | IPG16N10S4-61 | IPG16N10S461AATMA1 | IPG16N10S4-61A |
| Description | MOSFET MOSFET | MOSFET N-CHANNEL_100+ | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TDSON-8 | TDSON-8 | - |
| Number of Channels | 2 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 16 A | - | - |
| Rds On Drain Source Resistance | 53 mOhms, 53 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 7 nC, 7 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 29 W | - | - |
| Configuration | Dual | Single | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | - |
| Height | 1.27 mm | 1.27 mm | - |
| Length | 5.9 mm | 5.9 mm | - |
| Series | XPG16N10 | - | - |
| Transistor Type | 2 N-Channel | 1 N-Channel | - |
| Width | 5.15 mm | 5.15 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 5 ns, 5 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 1 ns, 1 ns | - | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 5 ns, 5 ns | - | - |
| Typical Turn On Delay Time | 3 ns, 3 ns | - | - |
| Part # Aliases | IPG16N10S461ATMA1 IPG16N1S461XT SP000892972 | IPG16N10S4-61A SP001091952 | - |
| Unit Weight | 0.003527 oz | - | - |