PartNumber | IPD90N06S4L03ATMA2 | IPD90N06S4L03ATMA1 | IPD90N06S4L05ATMA1 |
Description | MOSFET MOSFET | MOSFET N-Ch 60V 90A DPAK-2 OptiMOS-T2 | Trans MOSFET N-CH 60V 90A Automotive 3-Pin(2+Tab) DPAK T/R |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-252-3 | TO-252-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Configuration | Single | Single | - |
Qualification | AEC-Q101 | - | - |
Packaging | Reel | Reel | - |
Height | 2.3 mm | 2.3 mm | - |
Length | 6.5 mm | 6.5 mm | - |
Series | IPD90N06 | XPD90N06 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 6.22 mm | 6.22 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Part # Aliases | IPD90N06S4L-03 IPD9N6S4L3XT SP001028764 | IPD90N06S4L-03 IPD90N06S4L03XT SP000374326 | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |
Vds Drain Source Breakdown Voltage | - | 60 V | - |
Id Continuous Drain Current | - | 90 A | - |
Rds On Drain Source Resistance | - | 2.7 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 1.2 V | - |
Vgs Gate Source Voltage | - | 16 V | - |
Qg Gate Charge | - | 170 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 175 C | - |
Pd Power Dissipation | - | 150 W | - |
Channel Mode | - | Enhancement | - |
Fall Time | - | 20 ns | - |
Rise Time | - | 6 ns | - |
Typical Turn Off Delay Time | - | 140 ns | - |
Typical Turn On Delay Time | - | 21 ns | - |