 | |  | |
| PartNumber | IPD65R1K0CEAUMA1 | IPD65R1K4C6ATMA1 | IPD65R1K4C6 |
| Description | MOSFET CONSUMER | MOSFET N-Ch 700V 3.2A DPAK-2 | MOSFET N-Ch 700V 3.2A DPAK-2 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
| Tradename | CoolMOS | CoolMOS | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Series | CoolMOS CE | CoolMOS C6 | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | IPD65R1K0CE SP001421368 | IPD65R1K4C6ATMA1 SP001107078 | - |
| Unit Weight | 0.011993 oz | 0.139332 oz | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Id Continuous Drain Current | - | 3.2 A | - |
| Rds On Drain Source Resistance | - | 1.26 Ohms | - |
| Vgs th Gate Source Threshold Voltage | - | 2.5 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 10.5 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 28 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 N-Channel | - |
| Fall Time | - | 18.2 ns | - |
| Rise Time | - | 5.9 ns | - |
| Typical Turn Off Delay Time | - | 33 ns | - |
| Typical Turn On Delay Time | - | 7.7 ns | - |