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| PartNumber | IPD30N06S2-15 2N0615 | IPD30N06S2 | IPD30N06S215 |
| Description | |||
| Manufacturer | - | - | Infineon Technologies |
| Product Category | - | - | Transistors - FETs, MOSFETs - Single |
| Packaging | - | - | Reel |
| Part Aliases | - | - | IPD30N06S2-15 SP001061724 |
| Unit Weight | - | - | 0.139332 oz |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | TO-252-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 136 W |
| Maximum Operating Temperature | - | - | + 175 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 19 ns |
| Rise Time | - | - | 28 ns |
| Vgs Gate Source Voltage | - | - | +/- 20 V |
| Id Continuous Drain Current | - | - | 30 A |
| Vds Drain Source Breakdown Voltage | - | - | 55 V |
| Vgs th Gate Source Threshold Voltage | - | - | 3 V |
| Rds On Drain Source Resistance | - | - | 11.3 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 32 ns |
| Typical Turn On Delay Time | - | - | 13 ns |
| Qg Gate Charge | - | - | 41 nC |
| Forward Transconductance Min | - | - | - |
| Channel Mode | - | - | Enhancement |