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| PartNumber | IPB80P04P405ATMA1 | IPB80P04P407ATMA1 | IPB80P04P405XT |
| Description | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | MOSFET P-CH TO263-3 | Trans MOSFET P-CH 40V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB80P04P405ATMA1) |
| Manufacturer | Infineon | Infineon Technologies | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 80 A | - | - |
| Rds On Drain Source Resistance | 3.7 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 151 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 125 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | Reel | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Series | xPB80P04 | IPB80P04 | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 65 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 24 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 73 ns | - | - |
| Typical Turn On Delay Time | 42 ns | - | - |
| Part # Aliases | IPB80P04P4-05 IPB8P4P45XT SP000652618 | - | - |
| Unit Weight | 0.139332 oz | 0.068654 oz | - |
| Part Aliases | - | IPB80P04P4-07 IPB80P04P407XT SP000842038 | - |
| Package Case | - | TO-263-3 | - |
| Pd Power Dissipation | - | 88 W | - |
| Id Continuous Drain Current | - | - 80 A | - |
| Vds Drain Source Breakdown Voltage | - | - 40 V | - |
| Rds On Drain Source Resistance | - | 7.4 mOhms | - |
| Qg Gate Charge | - | 25 nC | - |