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| PartNumber | IPB80N04S2 | IPB80N04S2-H4 | IPB80N04S2-04 |
| Description | Trans MOSFET N-CH 40V 80A 3-Pin TO-263 T/R (Alt: IPB80N04S2-H4) | RF Bipolar Transistors MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS | |
| Manufacturer | INFINEON | INFINEON | INFINEON |
| Product Category | FETs - Single | FETs - Single | FETs - Single |
| Series | - | OptiMOS | - |
| Packaging | - | Reel | - |
| Part Aliases | - | IPB80N04S2H4ATMA1 IPB80N04S2H4XT SP000218165 | - |
| Unit Weight | - | 0.139332 oz | - |
| Mounting Style | - | SMD/SMT | - |
| Tradename | - | OptiMOS | - |
| Package Case | - | TO-252-3 | - |
| Technology | - | Si | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Transistor Type | - | 1 N-Channel | - |
| Pd Power Dissipation | - | 300 W | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 22 ns | - |
| Rise Time | - | 63 ns | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 80 A | - |
| Vds Drain Source Breakdown Voltage | - | 40 V | - |
| Rds On Drain Source Resistance | - | 3.7 mOhms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 46 ns | - |
| Typical Turn On Delay Time | - | 23 ns | - |
| Channel Mode | - | Enhancement | - |