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| PartNumber | IPB60R280P7ATMA1 | IPB60R280P6ATMA1 | IPB60R280P7 |
| Description | MOSFET LOW POWER_NEW | MOSFET LOW POWER_PRICE/PERFORM | Trans MOSFET N-CH 650V 12A 3-Pin TO-263 T/R (Alt: IPB60R280P7) |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
| Id Continuous Drain Current | 12 A | - | - |
| Rds On Drain Source Resistance | 214 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 18 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 53 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Reel | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 9 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 9 ns | - | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 60 ns | - | - |
| Typical Turn On Delay Time | 17 ns | - | - |
| Part # Aliases | IPB60R280P7 SP001664942 | IPB60R280P6 SP001364468 | - |
| Tradename | - | CoolMOS | - |
| Height | - | 4.4 mm | - |
| Length | - | 10 mm | - |
| Series | - | CoolMOS P6 | - |
| Width | - | 9.25 mm | - |
| Unit Weight | - | 0.139332 oz | - |